NSN 5961-01-213-1968
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-213-1968 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N4456, 1N4456, 1N4456, D235A1191, D235A119-1, 5961-01-213-1968, 01-213-1968, 5961012131968, 012131968
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 24, 1985 | 01-213-1968 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-213-1968
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N4456 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 1N4456 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1N4456 | 30043 | SOLID STATE DEVICES, INC. |
| D235A119-1 | 78711 | TELEPHONICS CORPORATIONDBA COMMUNICATIONS SYSTEMS DIVISION |
Technical Data | NSN 5961-01-213-1968
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C5.0 MAXIMUM AND CBH30.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACCG500.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |