NSN 5961-01-214-3129
Part Details | TRANSISTOR
5961-01-214-3129 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 417404395, 417/4/04395, 13079912, 13079912, 645733501, 645733-501, V11128, VN10KE7, VN10KE-7, VN10KE, 5961-01-214-3129, 01-214-3129, 5961012143129, 012143129
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 08, 1985 | 01-214-3129 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-214-3129
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 417/4/04395 | K0668 | LEONARDO MW LTD |
| 13079912 | 04939 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 13079912 | 58260 | PROGRAM MANAGER ADVANCED ATTACKHELICOPTER BARCOM AMCPM-AAH |
| 645733-501 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| V11128 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| VN10KE-7 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| VN10KE | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-214-3129
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW60.0 MAXIMUM AND CAX60.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG2.5 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.195 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |