NSN 5961-01-214-5669
Part Details | TRANSISTOR
5961-01-214-5669 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 10182252, 10182252, 10182252, 10182252, 5961-01-214-5669, 01-214-5669, 5961012145669, 012145669
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 13, 1985 | 01-214-5669 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-214-5669
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 10182252 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
| 10182252 | T6976 | PEGASUS SAVUNMA SAN. VE TIC.LTD.STI. |
| 10182252 | 0A169 | PRINTED CIRCUIT INDUSTRIES INC |
| 10182252 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-214-5669
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL AND AFE60.0 NOMINAL AND ABA5.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AABBE600.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATAAF1.3 WATTS AND BZAAF400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL |
| TERMINAL CIRCLE DIAMETER | 0.018 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |