NSN 5961-01-214-5670
Part Details | TRANSISTOR
5961-01-214-5670 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 10182276, 10182276, 10182276, 10182276, 5961-01-214-5670, 01-214-5670, 5961012145670, 012145670
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 13, 1985 | 01-214-5670 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-214-5670
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 10182276 | 54485 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI LAWRENCE |
| 10182276 | 9X991 | TRICELIN CORP DBA T C ELECTRONICS |
| 10182276 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
| 10182276 | 29056 | WOODARD ELECTRIC, INC. |
Technical Data | NSN 5961-01-214-5670
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM70.0 MAXIMUM AND CFE50.0 MAXIMUM AND CBA5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.2 WATTS AND BZCAF360.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.018 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.220 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |