NSN 5961-01-214-5676
Part Details | TRANSISTOR
5961-01-214-5676 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 10182255, 2N3384, STR10182255, 10182255, 5961-01-214-5676, 01-214-5676, 5961012145676, 012145676
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 13, 1985 | 01-214-5676 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-214-5676
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 10182255 | 31338 | SEMITRONICS CORP |
| 2N3384 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| STR10182255 | 55718 | SYNTAR INDUSTRIES INC |
| 10182255 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-214-5676
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL AND ACK30.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZAAB300.0 MILLIWATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL |
| TERMINAL CIRCLE DIAMETER | 0.018 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |