NSN 5961-01-216-2050

Part Details | TRANSISTOR

5961-01-216-2050 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4392, 2N4392, 2N4392, 2N4392, ITS31547, 2N4392, 4405200902, 44-052009-02, 4405200902, 44-052009-02, SES642, 2N4392, 5961-01-216-2050, 01-216-2050, 5961012162050, 012162050

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 07, 198501-216-205020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-216-2050
Part Number Cage Code Manufacturer
2N43920N0K0CALOGIC LLC
2N439204713FREESCALE SEMICONDUCTOR, INC.
2N439266182INTERFET CORPORATION
2N439232293INTERSIL INCSUB OF GENERAL ELECTRIC CO
ITS3154732293INTERSIL INCSUB OF GENERAL ELECTRIC CO
2N439227014NATIONAL SEMICONDUCTOR CORPORATION
44-052009-0215280NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV ES DEFENSIVE SYSTEMS DIVISION
44-052009-0231338SEMITRONICS CORP
SES64231338SEMITRONICS CORP
2N439217856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-01-216-2050
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICC40.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAK50.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAG1.8 WATTS
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-18
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE