NSN 5961-01-217-0185

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-217-0185 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 6551080, 655-1080, 583R531H09, SA10232, 583R531H09, 5961-01-217-0185, 01-217-0185, 5961012170185, 012170185

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 20, 198501-217-018562108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 3 PHASE

Cross Reference | NSN 5961-01-217-0185
Part Number Cage Code Manufacturer
655-108012969MICRO USPD INC
583R531H0997942NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NORTHROP GRUMMAN SYSTEMS
SA1023214099SEMTECH CORPORATION
583R531H0930043SOLID STATE DEVICES, INC.
Technical Data | NSN 5961-01-217-0185
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 REVERSE VOLTAGE, PEAK AND 70.0 FORWARD VOLTAGE, TOTAL RMS
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG4.00 AMPERES AND A.00 AMPERES AND A5.00 AMPERES
MOUNTING METHOD THREADED HOLE
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 3 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH1.250 INCHES NOMINAL
OVERALL WIDTH0.450 INCHES NOMINAL
OVERALL HEIGHT0.500 INCHES NOMINAL
SPECIAL FEATURESTWO 4-40 TAPPED MOUNTING HOLES.