NSN 5961-01-217-9261
Part Details | TRANSISTOR
5961-01-217-9261 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 90112B, 3N211, SFE1629H5, 3N211, SFE1629H5, 646881501, 646881-501, 5961-01-217-9261, 01-217-9261, 5961012179261, 012179261
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 05, 1985 | 01-217-9261 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-217-9261
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 90112B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 3N211 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SFE1629H5 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 3N211 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| SFE1629H5 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 646881-501 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-217-9261
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDT35.0 MAXIMUM AND CDW35.0 MAXIMUM AND CAX27.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG1.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |