NSN 5961-01-219-4312
Part Details | TRANSISTOR
5961-01-219-4312 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SFE1621H1, 617713903, 617713-903, 5961-01-219-4312, 01-219-4312, 5961012194312, 012194312
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 26, 1985 | 01-219-4312 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-219-4312
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SFE1621H1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 617713-903 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-219-4312
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX60.0 MAXIMUM AND CAW60.0 MAXIMUM AND C0.0 MAXIMUM AND C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD2.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF6.25 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 37695-617713 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |