NSN 5961-01-219-4313
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-219-4313 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: DKV6520, MA4ST002908, MA4ST002-908, KV2001, 619894908, 619894-908, DKV6520111, DKV6520-111, 5961-01-219-4313, 01-219-4313, 5961012194313, 012194313
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 26, 1985 | 01-219-4313 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-219-4313
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DKV6520 | 17504 | AIR-MAZE CORPALFCO DIV |
| MA4ST002-908 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| KV2001 | 52673 | KSW ELECTRONICS CORP |
| 619894-908 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| DKV6520-111 | 17540 | SKYWORKS SOLUTIONS, INC. |
Technical Data | NSN 5961-01-219-4313
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBE22.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG250.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.105 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 37695-61984 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | AN/PRC-68A/B |