NSN 5961-01-220-9915
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-220-9915 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 5E4820530005, 5E4820/53-0005, 5E4820530005, 5E4820/53-0005, JV1N940B1, JV1N940B-1, JANTX1N940B1, JANTX1N940B-1, 5961-01-220-9915, 01-220-9915, 5961012209915, 012209915
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 22, 1985 | 01-220-9915 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-220-9915
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5E4820/53-0005 | 6M193 | ARROW ZEUS ELECTRONICS |
| 5E4820/53-0005 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
| JV1N940B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N940B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-220-9915
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET0.03 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAS50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |