NSN 5961-01-221-2247
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-221-2247 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: BZX55C3V0, BZX55/C3V0, BZX55C3V0, BZX55C3V0, BZX55C3V0, 5961-01-221-2247, 01-221-2247, 5961012212247, 012212247
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 26, 1985 | 01-221-2247 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-221-2247
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BZX55/C3V0 | 24972 | AEG CORP |
| BZX55C3V0 | 7D893 | FAIRCHILD SEMICONDUCTOR CORPORATION |
| BZX55C3V0 | 13409 | RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR |
| BZX55C3V0 | 18612 | VISHAY INTERTECHNOLOGY, INC. |
Technical Data | NSN 5961-01-221-2247
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CFQ1.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 26.0 MILLIMETERS NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 3.9 MILLIMETERS NOMINAL |
| OVERALL DIAMETER | 1.9 MILLIMETERS NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |