NSN 5961-01-221-6525
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-221-6525 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4148, RELEASE5245, 2N4148, 5961-01-221-6525, 01-221-6525, 5961012216525, 012216525
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 02, 1985 | 01-221-6525 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-221-6525
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4148 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5245 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N4148 | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-01-221-6525
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C50.0 MAXIMUM AND CED150.0 MAXIMUM AND ADZ0.8 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AF0.250 AMPERES NOMINAL AND BACDF1.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| OVERALL LENGTH | 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |