NSN 5961-01-225-5398
Part Details | TRANSISTOR
5961-01-225-5398 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: J174, 2461882, AM2461882, J174, E174, 5961-01-225-5398, 01-225-5398, 5961012255398, 012255398
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 03, 1986 | 01-225-5398 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-225-5398
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| J174 | 17876 | PHILLOCRAFT CO |
| 2461882 | D0894 | ROHDE & SCHWARZ GMBH & CO. KG |
| AM2461882 | D0894 | ROHDE & SCHWARZ GMBH & CO. KG |
| J174 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| E174 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-225-5398
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C0.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG360.0 MILLIWATTS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL HEIGHT | 0.670 INCHES MINIMUM |
| OVERALL WIDTH | 0.145 INCHES NOMINAL |