NSN 5961-01-225-8993
Part Details | TRANSISTOR
5961-01-225-8993 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4867, 8695401, 869540-1, 8695401, 869540-1, 8695401, 869540-1, 869540, 2N4867, FN3661, 5961-01-225-8993, 01-225-8993, 5961012258993, 012258993
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 08, 1986 | 01-225-8993 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-225-8993
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4867 | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| 869540-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 869540-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 869540-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 869540 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N4867 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| FN3661 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-225-8993
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAWM40.0 MAXIMUM AND CAXM40.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |