NSN 5961-01-228-8740
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-228-8740 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTX1N5530B1, JANTX1N5530B-1, DZ900319G, 5550673, 5961-01-228-8740, 01-228-8740, 5961012288740, 012288740
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 22, 1986 | 01-228-8740 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-228-8740
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX1N5530B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| DZ900319G | KD4N7 | MINISTRY OF DEFENCE, DE&S AIRDEFENCEELECTRONIC WARFARE SYSTEMS |
| 5550673 | 53711 | NAVAL SEA SYSTEMS COMMAND |
Technical Data | NSN 5961-01-228-8740
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET10.0 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
| TEST DATA DOCUMENT | 53711-5550673 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |