NSN 5961-01-231-1409
Part Details | TRANSISTOR
5961-01-231-1409 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 5E4850080001, 5E4850/08-0001, JANTX2N3740, 5961-01-231-1409, 01-231-1409, 5961012311409, 012311409
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 23, 1986 | 01-231-1409 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-231-1409
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5E4850/08-0001 | 73030 | HAMILTON SUNDSTRAND CORPORATION |
| JANTX2N3740 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-231-1409
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CABM60.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND CACM60.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AACAC4.00 AMPERES NOMINAL AND AACAB2.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF25.0 WATTS |
| TRANSFER RATIO | CAK100.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.252 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.700 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |