NSN 5961-01-231-1428

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-231-1428 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 26910351, 2691035-1, SA9817, 5961-01-231-1428, 01-231-1428, 5961012311428, 012311428

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 23, 198601-231-142862108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 3 PHASE

Cross Reference | NSN 5961-01-231-1428
Part Number Cage Code Manufacturer
2691035-196214RAYTHEON COMPANYDBA RAYTHEON
SA981714099SEMTECH CORPORATION
Technical Data | NSN 5961-01-231-1428
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG7.50 AMPERES AND ACF150.00 AMPERES
MOUNTING METHOD THREADED HOLE
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 3 PHASE
OPERATING TEMP RANGE-55.0 TO +175.0 DEG CELSIUS
OVERALL LENGTH1.220 INCHES MINIMUM AND 1.270 INCHES MAXIMUM
OVERALL WIDTH0.720 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL HEIGHT0.500 INCHES MAXIMUM