NSN 5961-01-231-3389
Part Details | TRANSISTOR
5961-01-231-3389 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2SD424, 2SD424, 5961-01-231-3389, 01-231-3389, 5961012313389, 012313389
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 25, 1986 | 01-231-3389 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-231-3389
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2SD424 | 26147 | COASTCAST CORP |
| 2SD424 | 61802 | TOSHIBA INTERNATIONAL CORPORATIONDBA TOSHIBA INTERNATIONAL |
Technical Data | NSN 5961-01-231-3389
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM180.0 MAXIMUM AND CA+180.0 MAXIMUM AND CBA5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC15.00 AMPERES NOMINAL AND AACAEM15.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAB150.0 WATTS |
| TRANSFER RATIO | CAK140.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 400.0 MILLIMETERS MAXIMUM |
| OVERALL HEIGHT | 110.0 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 250.0 MILLIMETERS MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |