NSN 5961-01-234-7235

Part Details | TRANSISTOR

5961-01-234-7235 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 231276701, 231276-701, 2N5433PS337, C6838, 70401011, 7040101-1, 2N5433PS337, 2N5433PS337, 2N5433PS337, 2N54332, 2N5433-2, 5961-01-234-7235, 01-234-7235, 5961012347235, 012347235

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 18, 198601-234-723520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-234-7235
Part Number Cage Code Manufacturer
231276-70181413BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I
2N5433PS33727622BURNS AND TOWNE INC
C683812498CRYSTALONICS, INC.
7040101-110236ELECTRODYNAMICS, INC.DBA L-3 COMMUNICATIONS
2N5433PS33732293INTERSIL INCSUB OF GENERAL ELECTRIC CO
2N5433PS33712040NATIONAL SEMICONDUCTOR CORP
2N5433PS33717856SILICONIX INCORPORATEDDIV SILICONIX
2N5433-217856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-01-234-7235
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICC25.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAK100.00 MILLIAMPERES NOMINAL AND BACAD400.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICBZCAG300.0 MILLIWATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZL125.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.150 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
PRECIOUS MATERIAL GOLD
PRECIOUS MATERIAL AND LOCATIONLEADS GOLD