NSN 5961-01-236-0357
Part Details | TRANSISTOR
5961-01-236-0357 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 11784904, 5961-01-236-0357, 01-236-0357, 5961012360357, 012360357
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 10, 1986 | 01-236-0357 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-236-0357
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 11784904 | 19200 | US ARMY ARDEC RDECOM |
Technical Data | NSN 5961-01-236-0357
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL AND AFE50.0 NOMINAL AND ABA5.0 NOMINAL |
| INCLOSURE MATERIAL | 0$DPC0000 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES NOMINAL |
| OVERALL HEIGHT | 0.090 INCHES NOMINAL |
| OVERALL WIDTH | 0.180 INCHES NOMINAL |
| SPECIAL FEATURES | POWER DISSIPATION AT 25.0 DEG. C.=300MW; STORAGE TEMP. RANGE=-40.0 DEG.C. TO +125.0 DEG. C. |