NSN 5961-01-236-1102
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-236-1102 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N752A1, 1N752A-1, 1313195167, 13-1319516-7, DZ841115C, JANTXV1N752A1, JANTXV1N752A-1, 5961-01-236-1102, 01-236-1102, 5961012361102, 012361102
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 11, 1986 | 01-236-1102 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-236-1102
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N752A-1 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 13-1319516-7 | 11293 | GTE GOVERNMENT SYSTEMS CORPSTRATEGIC SYSTEMS DIV |
| DZ841115C | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| JANTXV1N752A-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-236-1102
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AGE5.9 NOMINAL |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES NOMINAL |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |