NSN 5961-01-236-1103
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-236-1103 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: NH1313195166, NH13-1319516-6, 1N751A1, 1N751A-1, 1313195166, 13-1319516-6, 1313195166, 13-1319516-6, DZ841113B, 5961-01-236-1103, 01-236-1103, 5961012361103, 012361103
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 11, 1986 | 01-236-1103 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-236-1103
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| NH13-1319516-6 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 1N751A-1 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 13-1319516-6 | 04655 | GENERAL DYNAMICS MISSION SYSTEMS,INC. |
| 13-1319516-6 | 11293 | GTE GOVERNMENT SYSTEMS CORPSTRATEGIC SYSTEMS DIV |
| DZ841113B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
Technical Data | NSN 5961-01-236-1103
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AGE5.9 NOMINAL |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | GENERAL APPLICATION ELECTRONICS (GEN-AP-E) |