NSN 5961-01-241-5346
Part Details | TRANSISTOR
5961-01-241-5346 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6307, 345214045, 345-214-045, 5961-01-241-5346, 01-241-5346, 5961012415346, 012415346
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 27, 1986 | 01-241-5346 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-241-5346
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6307 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| 345-214-045 | 07421 | INTERSTATE ELECTRONICS CORPORATIONDBA L-3 INTERSTATE ELECTRONICS |
Technical Data | NSN 5961-01-241-5346
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM600.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC8.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG125.0 WATTS |
| TRANSFER RATIO | BAK15.0 MINIMUM AND CAK75.0 MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |