NSN 5961-01-244-8488
Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-01-244-8488 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: 876152211, 876-15221-1, ASC1542886, 5961PL0912567, 790898105, 7908981-05, JANTXM1950048303, JANTXM19500/483-03, TXM1950048303, TXM19500/483-03, M1950048303JTX, M19500/483-03JTX, M1950048303, M19500-483-03, MILS19500483, MIL-S-19500/483, MILPRF19500483, MIL-PRF-19500/483, JXM1950048303, JXM19500/483-03, JANTX4833, JANTX483-3, JANTXM1950048303, JANTXM19500/483-03, JXM1950048303, JXM19500/483-03, 417860126, 4178601-26, S25A360J, 5961-01-244-8488, 01-244-8488, 5961012448488, 012448488
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 20, 1986 | 01-244-8488 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 3 PHASE
Cross Reference | NSN 5961-01-244-8488
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 876-15221-1 | 52515 | ALTURDYNE |
| ASC1542886 | Z4779 | ASC PTY LTD |
| 5961PL0912567 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 7908981-05 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| JANTXM19500/483-03 | 59377 | MICROSEMI CORP-COLORADO |
| TXM19500/483-03 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M19500/483-03JTX | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| M19500-483-03 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/483 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/483 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JXM19500/483-03 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX483-3 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTXM19500/483-03 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JXM19500/483-03 | 96906 | MILITARY STANDARDSPROMULGATED BY MILITARY DEPARTMENTS |
| 4178601-26 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| S25A360J | 13409 | RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR |
Technical Data | NSN 5961-01-244-8488
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 WORKING PEAK REVERSE VOLTAGE |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | A50.00 AMPERES |
| MOUNTING METHOD | UNTHREADED HOLE |
| TERMINAL TYPE AND QUANTITY | 5 TURRET |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 3 PHASE |
| OPERATING TEMP RANGE | -65.0 TO +150.0 DEG CELSIUS |
| OVERALL LENGTH | 2.220 INCHES MINIMUM AND 2.280 INCHES MAXIMUM |
| OVERALL WIDTH | 0.730 INCHES MINIMUM AND 0.770 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.820 INCHES MAXIMUM |
| SPECIAL FEATURES | ELECTROSTATIC SENSITIVE |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 483 GOVERNMENT SPECIFICATION |