NSN 5961-01-245-3433

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-245-3433 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: H980044001B, H980044-001B, SENB475, SEN-B-475, SA9573, SA9573, 5961-01-245-3433, 01-245-3433, 5961012453433, 012453433

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 26, 198601-245-343362108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-245-3433
Part Number Cage Code Manufacturer
H980044-001B82577RAYTHEON COMPANYDBA RAYTHEON
SEN-B-47513409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SA957314099SEMTECH CORPORATION
SA9573SH879SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY
Technical Data | NSN 5961-01-245-3433
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC150.0 REVERSE VOLTAGE, INSTANTANEOUS
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG13.00 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
OVERALL WIDTH0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM
OVERALL HEIGHT0.520 INCHES MAXIMUM