NSN 5961-01-245-3707

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-245-3707 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 717806000001, 717806000-001, 717801300001, 717801300-001, SENB650, SEN-B-650, 5961-01-245-3707, 01-245-3707, 5961012453707, 012453707

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 26, 198601-245-370762108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 3 PHASE

Cross Reference | NSN 5961-01-245-3707
Part Number Cage Code Manufacturer
717806000-00104939LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
717801300-00104939LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
SEN-B-65013409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
Technical Data | NSN 5961-01-245-3707
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC1000.0 PEAK INVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICA0.00 AMPERES
MOUNTING METHOD THREADED HOLE
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 3 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH1.500 INCHES NOMINAL
OVERALL WIDTH0.870 INCHES NOMINAL
OVERALL HEIGHT0.310 INCHES NOMINAL