NSN 5961-01-246-5620

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-246-5620 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: H980045001B, H980045-001B, SENB451001B, SEN-B-451-001B, SA9629, 5961-01-246-5620, 01-246-5620, 5961012465620, 012465620

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 15, 198601-246-562062108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 3 PHASE

Cross Reference | NSN 5961-01-246-5620
Part Number Cage Code Manufacturer
H980045-001B82577RAYTHEON COMPANYDBA RAYTHEON
SEN-B-451-001B13409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SA962914099SEMTECH CORPORATION
Technical Data | NSN 5961-01-246-5620
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC1000.0 REVERSE VOLTAGE, INSTANTANEOUS
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG8.00 AMPERES
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY5 UNINSULATED WIRE LEAD
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 3 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH1.500 INCHES NOMINAL
OVERALL WIDTH0.300 INCHES NOMINAL
OVERALL HEIGHT0.630 INCHES NOMINAL