NSN 5961-01-249-8681
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-249-8681 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N8231, 1N823-1, DT840827E, 28020045130, 280-20045-130, 5961-01-249-8681, 01-249-8681, 5961012498681, 012498681
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 19, 1987 | 01-249-8681 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-249-8681
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N823-1 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| DT840827E | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 280-20045-130 | 81205 | THE BOEING COMPANYDBA BOEING |
Technical Data | NSN 5961-01-249-8681
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| END ITEM IDENTIFICATION | MISSILE GRD PWR SUP |