NSN 5961-01-250-3389
Part Details | TRANSISTOR
5961-01-250-3389 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 9123421, 912342-1, 2N5090, 5961-01-250-3389, 01-250-3389, 5961012503389, 012503389
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 27, 1987 | 01-250-3389 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-250-3389
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 912342-1 | 80249 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 2N5090 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
Technical Data | NSN 5961-01-250-3389
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM55.0 MAXIMUM AND CA+30.0 MAXIMUM AND CBA3.5 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC0.40 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF4.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-60 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 3 PIN |
| OVERALL LENGTH | 0.935 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.437 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |