NSN 5961-01-250-8518
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-250-8518 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19020994, 1902-0994, 4M82Z1, 0.4M8.2Z1, SZG454, 19020994, 1902-0994, DZ790412B, 5961-01-250-8518, 01-250-8518, 5961012508518, 012508518
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 07, 1987 | 01-250-8518 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-250-8518
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1902-0994 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 4M82Z1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 0.4M8.2Z1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SZG454 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1902-0994 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| DZ790412B | 14552 | MICROSEMI CORPORATION |
Technical Data | NSN 5961-01-250-8518
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET8.2 MAXIMUM |
| VOLTAGE TOLERANCE IN PERCENT | M1.0/P1.0 |
| CURRENT RATING PER CHARACTERISTIC | BACAS12.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG4.0 WATTS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |