NSN 5961-01-251-5680

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-01-251-5680 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 50820180, 5082-0180, QSRD4780, QSRD-4780, QSRD4780, QSRD-4780, 50820180, 5082-0180, G2250741, G225074-1, G2250741, G225074-1, G2250741, G225074-1, 5961-01-251-5680, 01-251-5680, 5961012515680, 012515680

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 21, 198701-251-568020589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-251-5680
Part Number Cage Code Manufacturer
5082-018050434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
QSRD-478050434AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES
QSRD-478054893HEWLETT-PACKARD CO COMMUNICATIONSCOMPONENTS/AVANTEK DIV
5082-018028480HEWLETT-PACKARD COMPANYDBA HP
G225074-154X10RAYTHEON COMPANYDBA RAYTHEON
G225074-149956RAYTHEON COMPANYDBA RAYTHEON
G225074-13B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-251-5680
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTICBCT50.0 MINIMUM
CURRENT RATING PER CHARACTERISTICCKCCH10.00 MICROAMPERES
POWER RATING PER CHARACTERISTICATCAF1.0 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN200.0 DEG CELSIUS
INCLOSURE MATERIAL GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONDO-7
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.300 INCHES MAXIMUM
OVERALL DIAMETER0.107 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE