NSN 5961-01-251-5863

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-251-5863 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 1093550133, 109355-0133, SENB470, SEN-B-470, 5961-01-251-5863, 01-251-5863, 5961012515863, 012515863

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 21, 198701-251-586362108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-251-5863
Part Number Cage Code Manufacturer
109355-013304971RANTEC MICROWAVE SYSTEMS, INC.DBA RANTEC MICROWAVE ANTENNAS
SEN-B-47013409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
Technical Data | NSN 5961-01-251-5863
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC150.0 REVERSE VOLTAGE, INSTANTANEOUS
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICUCH10.00 MICROAMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH0.750 INCHES NOMINAL
OVERALL WIDTH0.750 INCHES NOMINAL
OVERALL HEIGHT0.500 INCHES MAXIMUM