NSN 5961-01-253-5627
Part Details | TRANSISTOR
5961-01-253-5627 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IRFD113, IRFD113, 5961-01-253-5627, 01-253-5627, 5961012535627, 012535627
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 21, 1987 | 01-253-5627 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-253-5627
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IRFD113 | 59993 | INTERNATIONAL RECTIFIER CORPORATIONUse CAGE Code 81483 for cataloging |
| IRFD113 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-253-5627
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX60.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD0.80 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.150 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 4 PRINTED CIRCUIT |
| OVERALL LENGTH | 0.280 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.140 INCHES MAXIMUM |
| OVERALL WIDTH | 0.198 INCHES MAXIMUM |
| SPECIAL FEATURES | 4-PIN,DUAL-IN-LINE PACKAGE |