NSN 5961-01-259-5305
Part Details | TRANSISTOR
5961-01-259-5305 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 654496, 654496, 5961-01-259-5305, 01-259-5305, 5961012595305, 012595305
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 18, 1987 | 01-259-5305 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-259-5305
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 654496 | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
| 654496 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-259-5305
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAN10.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC0.10 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG400.0 MILLIWATTS |
| TRANSFER RATIO | BAK75.0 MINIMUM |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |