NSN 5961-01-260-2918
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-260-2918 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JANTXV1N5525B, 917AS6069, 5961-01-260-2918, 01-260-2918, 5961012602918, 012602918
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 29, 1987 | 01-260-2918 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-260-2918
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTXV1N5525B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 917AS6069 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
Technical Data | NSN 5961-01-260-2918
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET6.2 MAXIMUM |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | BACAS1.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |