NSN 5961-01-261-4004

Part Details | TRANSISTOR

5961-01-261-4004 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N6512, RELEASE6555, RELEAES 6555, 2N6513, 2N6513, 2N6512, 2N6513, 2N6513, 5961-01-261-4004, 01-261-4004, 5961012614004, 012614004

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 12, 198701-261-400420588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-261-4004
Part Number Cage Code Manufacturer
2N651280131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE655580131ELECTRONIC INDUSTRIES ASSOCIATION
RELEAES 655580131ELECTRONIC INDUSTRIES ASSOCIATION
2N651364039HYBRID SEMICONDUCTORS & ELECTRONICSINC
2N651334371INTERSIL CORPORATIONDIV NA
2N651234371INTERSIL CORPORATIONDIV NA
2N651343611MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE
2N651350891SEMICONDUCTOR TECHNOLOGY INCDBA S T I
Technical Data | NSN 5961-01-261-4004
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAM400.0 MAXIMUM AND CFG400.0 MAXIMUM AND CBA6.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACAE10.00 AMPERES NOMINAL AND AACAC7.00 AMPERES NOMINAL AND AACAB3.00 AMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAF120.0 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN200.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-3
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH1.573 INCHES MAXIMUM
OVERALL HEIGHT0.450 INCHES MAXIMUM
OVERALL WIDTH1.050 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN