NSN 5961-01-267-5811
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-267-5811 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: VX190, A6X120, A6X120, 26902071, 2690207-1, 5961-01-267-5811, 01-267-5811, 5961012675811, 012675811
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 13, 1987 | 01-267-5811 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-267-5811
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VX190 | 58202 | CRANE ELECTRONICS, INC.DBA STC MICROWAVE SYSTEMS |
| A6X120 | 21847 | FEI MICROWAVE INC |
| A6X120 | 14844 | FREQUENCY ELECTRONICS, INC. |
| 2690207-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-267-5811
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CFQ120.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF3.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 RIBBON |
| OVERALL LENGTH | 0.400 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.095 INCHES NOMINAL |
| OVERALL WIDTH | 0.284 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | DETECTOR AND TUNNEL DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |