NSN 5961-01-268-7743
Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-01-268-7743 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: 006275, VH847TT, VH847TT, 5961-01-268-7743, 01-268-7743, 5961012687743, 012687743
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 07, 1987 | 01-268-7743 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 1 PHASE
Cross Reference | NSN 5961-01-268-7743
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 006275 | 19623 | GE AVIATION SYSTEMS LLCDBA GE AVIATION |
| VH847TT | 27777 | L3 TECHNOLOGIES, INC.DBA INSIGHT TECHNOLOGY DIVISION |
| VH847TT | 62703 | MICRO QUALITY SEMICONDUCTOR INC SUBOF MICROSEMI CORP |
Technical Data | NSN 5961-01-268-7743
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 800.0 PEAK INVERSE VOLTAGE |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | ACG6.00 AMPERES |
| MOUNTING METHOD | UNTHREADED HOLE |
| TERMINAL TYPE AND QUANTITY | 4 TURRET |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 1 PHASE |
| OVERALL LENGTH | 0.610 INCHES MAXIMUM |
| OVERALL WIDTH | 0.551 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.205 INCHES NOMINAL |