NSN 5961-01-269-1736

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-01-269-1736 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: C106D, C106D1X341, CR2AM8, CR2AM-8, CR2AM8, CR2AM-8, P10102, P1010-2, 5961-01-269-1736, 01-269-1736, 5961012691736, 012691736

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 12, 198701-269-173633096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-269-1736
Part Number Cage Code Manufacturer
C106D25415ALLIED HEALTHCARE PRODUCTS INCGOMCO DIV
C106D1X34103508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
CR2AM-81S287NEWARK CORPORATIONDIV NEWARK
CR2AM-802929NEWARK ELECTRONICS CORPORATIONDBA NEWARK
P1010-253010SSAC INC
Technical Data | NSN 5961-01-269-1736
Characteristic Specifications
SPECIAL FEATURESMATL:SILICON; CONFIGURATION: JUNCTION CONTACT; JUNCTION CONFIGURATION: PNPN; MAX. WORKING VOLTAGE: 400V; OPERATING TEMP: -40C TO +110C; RMS FORWARD ON-STATE CURRENT: 4 AMPS MAX.; PEAK FORWARD ON-STATE REPETITIVE CURRENT: 75 AMPS; PEAK ON VOLTAGE: 2.2 VOLTS MAX AT 4 AMPS; INCLOSURE MATL: PLASTIC; JEDEC CASE OUTLINE DESIGNATION: TO-202; MOUNTING METHOD: UNTHREADED HOLE; TERMINAL TYPE: 3 UNINSULATED WIRE LEAD; THYRISTOR OVERALL LENGTH(INCLUDING MOUNTING PLATE): .835 IN. MAX; OVERALL HEIGHT: .190 IN. MAX; OVERALL WIDTH: .400 IN. MAX; REPAIR PART FOR 6515-01-246-1938,SUCTION APPARATUS,SURGICAL,MODEL 6003 BY GOMCO