NSN 5961-01-269-4076
Part Details | TRANSISTOR
5961-01-269-4076 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 6011588001, 6011588-001, 2N5583JTX, SRF5365H, 5961-01-269-4076, 01-269-4076, 5961012694076, 012694076
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 16, 1987 | 01-269-4076 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-269-4076
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 6011588-001 | 12436 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 2N5583JTX | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SRF5365H | 04713 | FREESCALE SEMICONDUCTOR, INC. |
Technical Data | NSN 5961-01-269-4076
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB30.0 MAXIMUM AND CAC30.0 MAXIMUM AND CBM3.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | HTCBF50.00 NANOAMPERES AND BACAC100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCBH5.0 WATTS |
| TRANSFER RATIO | BAK25.0 MINIMUM AND CAK100.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL25.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.210 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |