NSN 5961-01-275-3065
Part Details | PHOTO SEMICONDUCTOR DEVICE
5961-01-275-3065 A Semiconductor Device (1) which is responsive to visible or infrared radiant energy. May or may not include mounting hardware and/or heat sink. Excludes SEMICONDUCTOR DEVICE (1), DIODE; SEMICONDUCTOR DEVICE (1), THYRISTOR AND TRANSISTOR. For solid state devices which emit visible or infrared radiant energy, see LIGHT EMITTING DIODE.
Alternate Parts: MOC3041, MOC3041, MCP3041, MOC3041, 3097, NTE3097, IL410, 5961-01-275-3065, 01-275-3065, 5961012753065, 012753065
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 20, 1988 | 01-275-3065 | 20587 ( SEMICONDUCTOR DEVICE, PHOTO ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-275-3065
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MOC3041 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| MOC3041 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MCP3041 | 58361 | GENERAL INSTRUMENT CORPOPTOELECTRONICS DIV |
| MOC3041 | 47379 | ISOCOM INC |
| 3097 | 7T184 | NTE ELECTRONICS INCSUB OF SOLID STATE INC |
| NTE3097 | 7T184 | NTE ELECTRONICS INCSUB OF SOLID STATE INC |
| IL410 | 25088 | SIEMENS CORP |
Technical Data | NSN 5961-01-275-3065
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBE6.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF60.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.175 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 6 PIN |
| OVERALL LENGTH | 0.355 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.180 INCHES MAXIMUM |
| OVERALL WIDTH | 0.270 INCHES MAXIMUM |
| SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL |
| CRITICALITY CODE JUSTIFICATION | FEAT |