NSN 5961-01-275-4635
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-275-4635 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N2999B, 1313300181, 13-1330018-1, DZ860710C, 5961-01-275-4635, 01-275-4635, 5961012754635, 012754635
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 22, 1988 | 01-275-4635 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-275-4635
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N2999B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 13-1330018-1 | 11293 | GTE GOVERNMENT SYSTEMS CORPSTRATEGIC SYSTEMS DIV |
| DZ860710C | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
Technical Data | NSN 5961-01-275-4635
| Characteristic | Specifications |
|---|---|
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | LGM 30 |