NSN 5961-01-276-1182
Part Details | TRANSISTOR
5961-01-276-1182 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 18550611, 1855-0611, 18550611, 1855-0611, J2741, 5961-01-276-1182, 01-276-1182, 5961012761182, 012761182
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 04, 1988 | 01-276-1182 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-276-1182
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1855-0611 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1855-0611 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| J2741 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-276-1182
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BAJ30.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | BABBR5.00 MILLIAMPERES NOMINAL AND BACBR15.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF350.0 MILLIWATTS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES NOMINAL |
| OVERALL HEIGHT | 0.165 INCHES NOMINAL |
| OVERALL WIDTH | 0.205 INCHES NOMINAL |