NSN 5961-01-276-2456
Part Details | TRANSISTOR
5961-01-276-2456 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MTM3N100, MTM1N100, MTM-1N100, G390358S1, BUZ53A, 5961-01-276-2456, 01-276-2456, 5961012762456, 012762456
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 06, 1988 | 01-276-2456 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-276-2456
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MTM3N100 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MTM-1N100 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| G390358S1 | 24930 | HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, RADAR |
| BUZ53A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
Technical Data | NSN 5961-01-276-2456
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BC+2.0 MINIMUM AND C.5 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | HTCBW500.00 NANOAMPERES AND CKCBR250.00 MICROAMPERES |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL140.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-204AA |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 1.550 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |