NSN 5961-01-276-4711
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-276-4711 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: QB1158A01, UES 1101, BYV27100, BYV27-100, BYV27100, BYV27-100, 09962810001, 0996281-0001, BYV27100, BYV27-100, 5961-01-276-4711, 01-276-4711, 5961012764711, 012764711
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 09, 1988 | 01-276-4711 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-276-4711
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| QB1158A01 | F6371 | INEO DEFENSE SOPHIAANTIPOLISVALBONNE |
| UES 1101 | 12969 | MICRO USPD INC |
| BYV27-100 | F6650 | PHILIPS COMPOSANTS SA DIVISIONSEMICONDUCTEURS |
| BYV27-100 | F0862 | PHILIPS FRANCE |
| 0996281-0001 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| BYV27-100 | F4022 | VISHAY GENERAL SEMICONDUCTOR SAS |
Technical Data | NSN 5961-01-276-4711
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CEC50.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCG2.50 AMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.700 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | RECTIFIER |