NSN 5961-01-278-4296
Part Details | TRANSISTOR
5961-01-278-4296 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RFK35N10, RFK35N10, RFK35N10, RFK35N10, 5961-01-278-4296, 01-278-4296, 5961012784296, 012784296
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 05, 1988 | 01-278-4296 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-278-4296
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RFK35N10 | 29964 | ALLIED DEVICES CORPDBA ABSOLUTE PRECISION CO |
| RFK35N10 | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| RFK35N10 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| RFK35N10 | 34371 | INTERSIL CORPORATIONDIV NA |
Technical Data | NSN 5961-01-278-4296
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A00.0 NOMINAL AND C.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACB+35.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG150.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-204AE |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.563 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.350 INCHES NOMINAL |
| OVERALL WIDTH | 0.820 INCHES NOMINAL |