NSN 5961-01-280-1181
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-280-1181 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5990BDS, 1N5990B-DS, 1N5990B, 1N5990B, DZ860320C, DZ860205A, 1N5990B, 755090A02451, 755090A0245-1, 5961-01-280-1181, 01-280-1181, 5961012801181, 012801181
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 01, 1988 | 01-280-1181 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-280-1181
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5990B-DS | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5990B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5990B | 58880 | MEGGITT (NEW HAMPSHIRE), INC |
| DZ860320C | 14552 | MICROSEMI CORPORATION |
| DZ860205A | 14552 | MICROSEMI CORPORATION |
| 1N5990B | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 755090A0245-1 | 87990 | QUARTERMASTER GENERAL |
Technical Data | NSN 5961-01-280-1181
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET3.9 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M0.5/P0.5 |
| CURRENT RATING PER CHARACTERISTIC | AS5.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG500.0 MILLIWATTS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-204AH |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.250 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES NOMINAL |
| OVERALL DIAMETER | 0.075 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |