NSN 5961-01-281-5576
Part Details | TRANSISTOR
5961-01-281-5576 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: AT2615, AT-2615, AT01670, AT-01670, 6163022, 616302-2, 6163021, 616302-1, 5961-01-281-5576, 01-281-5576, 5961012815576, 012815576
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 26, 1988 | 01-281-5576 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-281-5576
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| AT-2615 | 24539 | AGILENT TECHNOLOGIES INC. DIVSEMICONDUCTOR PRODUCTS GROUP |
| AT-01670 | 24539 | AGILENT TECHNOLOGIES INC. DIVSEMICONDUCTOR PRODUCTS GROUP |
| 616302-2 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| 616302-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-281-5576
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAY1.5 MAXIMUM AND CAL20.0 MAXIMUM AND CA+12.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC150.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.464 INCHES NOMINAL |
| OVERALL HEIGHT | 0.034 INCHES NOMINAL |
| OVERALL WIDTH | 0.464 INCHES NOMINAL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |