NSN 5961-01-286-2868
Part Details | TRANSISTOR
5961-01-286-2868 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MA42325, MA-42325, 28596421, 2859642-1, 5961-01-286-2868, 01-286-2868, 5961012862868, 012862868
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 29, 1988 | 01-286-2868 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-286-2868
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MA-42325 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 2859642-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-286-2868
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAN20.0 MAXIMUM AND CAY1.0 MAXIMUM AND CAL30.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG360.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE AND BURN IN |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |